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1

Determination of phosphorus contamination during antimony implantation by measurement and simulation

M. Kuruc, L. Hulényi, R. Kinder

Journal:

Applied Surface Science

Year:

2006

Language:

english

File:

PDF, 296 KB

english, 2006

2

A study on thermal emission of charges at Si3N4—GaAs interfaces after annealing in N2 and N2 + H2 mixtures

J. Ivančo, I. Thurzo, L. Hulényi

Journal:

Materials Science and Engineering: B

Year:

1996

Language:

english

File:

PDF, 413 KB

english, 1996

3

Comparison of oxides prepared in CW and pulse microwave plasma

J. Musil, L. Bárdoš, L. Hulényi, G. Lončar

Journal:

physica status solidi (a)

Year:

1980

Language:

english

File:

PDF, 346 KB

english, 1980

4

Determination of the depth of shallow implanted p+–n junctions by the four-point probe method

R. Kinder, L. Hulényi, F. Mika

Journal:

physica status solidi (a)

Year:

1996

Language:

english

File:

PDF, 372 KB

english, 1996

5

Improved determination of phosphorus contamination during ion implantation by SRP and simulations

M. Kuruc, L. Hulényi, R. Kinder

Journal:

Applied Surface Science

Year:

2009

Language:

english

File:

PDF, 597 KB

english, 2009

6

The negative role of the fast electrons in the microwave oxidation of silicon

L. Bárdoš, J. Musil, F. Žáček, L. Hulényi

Journal:

Czechoslovak Journal of Physics

Year:

1978

Language:

english

File:

PDF, 237 KB

english, 1978

7

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Determination of implanted layer depth in silicon by electrochemical C-V technique

Hulenyi, L., Kinder, R., Satka, A.

Year:

2000

Language:

english

File:

PDF, 293 KB

english, 2000

8

[IEEE ASDAM'02 (4th International Conference on Advanced Semiconductor Devices and Microsystems) - Smolenice Castle, Slovakia (14-16 Oct. 2002)] The Fourth International Conference on Advanced Semiconductor Devices and Microsystem - Some possibilities for determining the depth of the p-n junction and profiles of semiconductor layers

Hulenyi, L., Kinder, R.

Year:

2002

Language:

english

File:

PDF, 199 KB

english, 2002

9

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Measurement and determination of the carrier concentration profile of semiconductor layers by PCIV method

Hulenyi, L., Kinder, R., Kuruc, M.

Year:

2004

Language:

english

File:

PDF, 727 KB

english, 2004

10

[IEEE ASDAM'02 (4th International Conference on Advanced Semiconductor Devices and Microsystems) - Smolenice Castle, Slovakia (14-16 Oct. 2002)] The Fourth International Conference on Advanced Semiconductor Devices and Microsystem - Profiling of a GaAs structure using the probe method

Kinder, R., Srnanek, R., Walachova, J., Hulenyi, L., Tlaczala, M., Sciana, B., Radziewicz, D.

Year:

2002

Language:

english

File:

PDF, 192 KB

english, 2002

11

Can money buy EU love?

Fidrmuc, Jan, Hulényi, Martin, Tunalı, Çiğdem Börke

Journal:

European Journal of Political Economy

Year:

2019

Language:

english

File:

PDF, 1.62 MB

english, 2019